PIN diode

Summary

A PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts. The wide intrinsic region is in contrast to an ordinary p–n diode. The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications. The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device. Operation A PIN diode operates under what is known as high-level injection. In other words, the intrinsic "i" region is flooded with charge carriers from the "p" and "n" regions. Its function can be likened to filling up a water bucket with a hole on the side. Once the water reaches the hole's level it will begin to pour out. Similarly

Official source

https://en.wikipedia.org/wiki/PIN_diode

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Related publications (25)

Related publications

Related people (1)

Related people

Related units (1)

Related units

Related concepts (13)

Related concepts

Related courses (12)

Related courses

Related lectures (17)

Related lectures

Related publications (25)

Diode fibres for fabric-based optical communications

Valentine Dominique Favrod

2018

Spatial wave control using a self-biased nonlinear metasurface at microwave frequencies

Ali Momeni

Recently, investigation of metasurfaces has been extended to wave control through exploiting nonlinearity. Among all of the ways to achieve tunable metasurfaces with multiplexed performances, nonlinearity is one of the promising choices. Although several proposals have been reported to obtain nonlinear architectures at visible frequencies, the area of incorporating nonlinearity in form of passive-designing at microwave metasurfaces is open for investigation. In this paper, a passive wideband nonlinear metasurface is manifested, which is composed of embedded L-shape and r -shape meta-atoms with PIN-diode elements. The proposed self-biased nonlinear metasurface has two operational states: at low power intensities, it acts as a Quarter Wave Plate (QWP) in the frequency range from 13.24 GHz to 16.38 GHz with an Axial Ratio (AR) of over 21.2%. In contrast, at high power intensities, by using the polarization conversion property of the proposed PIN-diode based meta-atoms, the metasurface can act as a digital metasurface. It means that by arranging the meta-atoms with a certain coding pattern, the metasurface can manipulate the scattered beams and synthesize well-known patterns such as diffusion-like and chessboard patterns at an ultra-wide frequency range from 8.12 GHz to 19.27 GHz (BW=81.4%). Full-wave and nonlinear simulations are carried out to justify the performance of the wideband nonlinear metasurface. We expect the proposed self-biased nonlinear metasurface at microwave frequencies reveals excellent opportunities to design limiter metasurfaces and compact reconfigurable imaging systems. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

OPTICAL SOC AMER2020

This thesis presents a systematic study on the merits and limitations on using pin-by-pin resolution and transport theory based approaches for nuclear core design calculations. Starting from the lattice codes and an optimal cross section generation scheme, it compares different methods, transport approximations, and spatial discretizations used in pin-by-pin homogenized codes. It is in the interest of nuclear power plant operators to employ more heterogeneous core loadings in order to improve the fuel utilization and decrease the amount of spent fuel. This necessarily increases the requirements on the accuracy of the computation tools used for the core design and safety analysis. One possibility is employing 3D core solvers with higher spatial resolution, e.g. pin-cell wise. The comparison of several lattice codes indicates that already the proper generation of diffusion coefficients and higher-order scattering moments for pin-cell geometry is not straightforward. Out of three available lattice codes, two generated unphysical diffusion coefficient when using the inscatter approximation, while the last code was not able to provide the higher scattering moments. Several few-assembly test cases with either high neutron leakage effects or MOX/uranium interfaces showed that the quality of the results of diffusion and SP3 solvers depends critically on the choice of the diffusion coefficient: in the outscatter approximation, it can cause major deviations, while the inscatter seems overall more adequate. Regarding the transport solvers, results obtained with the SN solver DORT showed very good performance for MOX/uranium interfaces, but major deviations occurred for problems with large power gradients. On the other hand, the MOC solver nTRACER showed in all cases small average error, but 2 - 3 % error around the interface of different assemblies. A study on spatial discretization indicated that the finite difference method applied on pin-cells does not properly capture the big flux changes between MOX and uranium fuel, while the nodal expansion method is more accurate but too slow. It was suggested to use the finite difference method with finer mesh in the outer assembly pin-cells, which increases the required computation time by only 50 % and decreases the pin power errors below 1 % with respect to lattice code results. Due to some problems which were observed with the available diffusion/SP3 solvers, a new SP3 solver was implemented in the DORT-TD platform. Several core tests showed that the SP3 pin-by-pin solver can significantly outperform the state-of-the-art nodal solver SIMULATE-5, in particular for reactor cores with inserted control rods. Finally, the pin-by-pin solvers were coupled to a depletion solver. For that, an accurate and fast interpolation routine had to be implemented. The obtained results of full-cycle depletion with complex core loading showed very good performance in comparison to a heterogeneous transport-based fine-group calculations.

EPFL2018