Concept

PIN diode

Related publications (81)

Amorphous silicon based particle detectors

Christophe Ballif, Sylvain Dunand, Matthieu Despeisse, Yannick Samuel Riesen, François Eric Powolny, Andrea Franco

Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates ...

Materials Research Society2012

X-Band reflectarray antenna with switching-beam using PIN diodes and gathered elements

An electronically switching-beam reflectarray antenna to be used in X-band has been designed, manufactured and tested, using PIN diodes as switching device. The antenna has 244 elements arranged in a circular aperture. With the aim of saving electronic dev ...

Institute of Electrical and Electronics Engineers2012

Experimental Analysis of Lag Sources in Pinned Photodiodes

Maher Kayal, Nicolas Blanc, Lysandre-Edouard Bonjour

A measurement method is reported to distinguish the different mechanisms that lead to image lag in image sensors based on pinned photodiodes (PPDs). This new method can differentiate between the lag caused by a potential barrier or pocket and gate traps in ...

Institute of Electrical and Electronics Engineers2012

Charge collection in amorphous silicon solar cells: Cell analysis and simulation of high-efficiency pin devices

Christophe Ballif, Matthieu Despeisse, Michael Elias Stückelberger, Yannick Samuel Riesen, Brice Perruche

The drift length Ldrift=μτE within the i layer of a-Si:H solar cells is a crucial parameter for charge collection and efficiency. It is strongly reduced not only by light-induced reduction of μτ, but also by electric field deformation ΔE by charges near th ...

Elsevier2012

Improvement of the open circuit voltage by modifying the transparent ITO front electrode in amorphous n-i-p solar cells

Christophe Ballif, Franz-Josef Haug, Rémi Biron, Frank Jonathan Leresche, Jonathan Besuchet, Gilles Kratzer

At the front contact of thin film silicon solar cells, the junction between the p-doped window layer and the n-type transparent electrode results in a barrier that must be surmounted by the charge carriers. The barrier height is governed by the work functi ...

Wiley-Blackwell2012

Photocurrent spectroscopy of site-controlled pyramidal quantum dots

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Jérôme Faist, Arun Mohan

Intraband photocurrent spectroscopy of site-controlled pyramidal quantum dots by inserting them into the intrinsic region of n-i-n like quantum dot infrared photodetector structure is reported. The photovoltaic response is observed in the mid-infrared regi ...

American Institute of Physics2012

On the origin of exciton formation in dye doped Alq(3) OLEDs

Libero Zuppiroli

Electrically Detected Magnetic Resonance (EDMR) was used to investigate the influence of dye doping on spin-dependent exciton formation in aluminum (III) 8-hydroxyquinoline (Alq(3)) based Organic Light Emitting Diodes (OLEDs) with different device structur ...

Springer2012

On origin and intrinsic electrical properties of the colossal dielectric constant state in CaCu3Ti4O12

Paul Muralt

The CaCu3Ti4O12 (CCTO) thin films were deposited on Pt/TiO2/Ti/SiO2/Si (100) substrates by pulsed laser deposition. The temperature dependences of dielectric constant were measured in the as-produced thin film samples, showing the so-called colossal dielec ...

Iop Publishing Ltd, Dirac House, Temple Back, Bristol Bs1 6Be, England2010

Recent developments on reconfigurable band-filtering antennas

Julien Perruisseau-Carrier

This paper presents implementations of very wideband antennas with reconfigurable band-rejection filtering within the band. The base antenna topology used is a dipole slot bow-tie whose maximal dimension at the lowest matched frequency is only 0.2λ0. The a ...

2010

Simulation of Double-Gate Silicon Tunnel FETs with a High-k Gate Dielectric

Katherine Boucart

The down-scaling of conventional MOSFETs has led to an impending power crisis, in which static power consumption is becoming too high. In order to improve the energy-efficiency of electronic circuits, small swing switches are interesting candidates to repl ...

EPFL2010

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