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Using a first-principles approach, we assess the validity of a picture for the energetics at Si-SiO2 interfaces based on bond energies complemented with penalty energies for silicon atoms in intermediate oxidation states. By total-energy calculations on cl ...
Size-dependent effects in the core-peak and Fermi-edge features of Au-cluster photoemission spectra have been investigated for two different substrates: polycrystalline and highly oriented pyrolytic graphite. In contrast with common substrates such as amor ...
A model structure of vitreous silica, for which the vibrational frequencies and eigenmodes were calculated from first principles, is used to investigate vibrational amplitudes. Calculated mean-square displacements for oxygen and silicon atoms are obtained ...
Thin silicon dioxide films nitrided in N2O by rapid thermal processing (RTP) or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacito ...
The authors present detailed studies of electronic properties of Al-Si alloys prepared in a nonequilibrium state by means of rapid solidification. The quenched alloys exhibit an enhanced superconducting transition temperature up to 6.2 K in an Al-Si 30 at. ...
Thin, hydrogenated silicon and carbon containing films have been deposited by the siliconization procedure on targets made from some metal alloys, pure metals, graphite and Si single crystal. The deposits were investigated by electron microprobe and surfac ...
The initial compaction under uniaxial hot-pressing conditions of titanium monotapes containing silicon carbide fibres is studied for variable matrix/fibre volume ratio, temperature (800-950 degrees C) and compaction stress (10-40 MPa). The matrix compactio ...
The behavior of alpha-quartz under hydrostatic and nonhydrostatic high-pressure conditions has been investigated in molecular dynamics simulations of silica in order to clarify the role of nonhydrostatic stresses in the amorphization process. It is shown t ...
Stable negative ions containing up to sixteen silicon atoms have been measured by mass spectrometry in RF power-modulated silane plasmas for amorphous silicon deposition. These hydrogenated silicon cluster ions reach much higher masses than the positive io ...
