Concept

Valleytronics

Related publications (16)

Valley Zeeman effect in elementary optical excitations of monolayer WSe2

Andras Kis, Adrien Victor Allain, Dominik Sebastian Lembke, Meinrad Sidler

A monolayer of a transition metal dichalcogenide such as WSe2 is a two-dimensional direct-bandgap valley-semiconductor(1,2) having an effective honeycomb lattice structure with broken inversion symmetry. The inequivalent valleys in the Brillouin zone could ...

Nature Publishing Group2015

Valley-polarized massive charge carriers in gapped graphene

Klaus Kern, Marko Burghard, Eva Carmen Peters

The lifting of the fourfold degeneracy of the zeroth Landau level in graphene under high magnetic fields has been the subject of numerous experimental studies, and attributed to various mechanisms such as pure spin splitting, spin splitting combined with s ...

Amer Physical Soc2013

Charge transport gap in graphene antidot lattices

Klaus Kern, Marko Burghard, Eva Carmen Peters

Graphene antidot lattices (GALs) offer an attractive approach to band-gap engineering in graphene. Theoretical studies indicate that the size of the opened gap is sensitive to the shape, size, and architecture of the nanoholes introduced into the graphene ...

Amer Physical Soc2012

Dominant phonon wavevectors of the 2D Raman mode of graphene

Nicola Marzari

We investigate the dominant phonon wavevectors q* and the associated dominant phonon-assisted electronic transitions implied by the 2D Raman mode of graphene by combining ab initio calculations with a full two-dimensional integration over the graphene Bril ...

2011

Magnonic minibands in antidot lattices with large spin-wave propagation velocities

Dirk Grundler

Antidot lattices fabricated from permalloy thin films have been investigated by all-electrical spin-wave spectroscopy and Brillouin light scattering. Periodic arrays of 120-nm-diameter nanoholes have been prepared using focused ion beam etching. The period ...

2011

Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Alfredo Pasquarello, Peter Broqvist, Fabien Devynck

Using a density functional approach, we study structural and electronic properties of the 4H(0001)-SiC/SiO2 interface. Through the sequential use of classical and ab initio simulation methods, we generate an abrupt model structure which describes the trans ...

2007

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