Concept

Memory cell (computing)

Related publications (232)

Multi-level wordline driver for robust SRAM design in nano-scale CMOS technology

In this paper, a multi-level wordline driver scheme is presented to improve 6T-SRAM read and write stability. The proposed wordline driver generates a shaped pulse during the read mode and a boosted wordline during the write mode. During read, the shaped p ...

Elsevier2014

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

Mihai Adrian Ionescu, Wladyslaw Grabinski, Antonios Bazigos, Arnab Biswas, Nilay Dagtekin

In this work we report experimental results on the use of Tunnel Field-Effect Transistors (TFET) as capacitorless Dynamic Random Access Memory (DRAM) cells, implemented as a double-gate (DG) Fully-Depleted Silicon-On-Insulator (FD-SOI) devices. The devices ...

American Institute of Physics2014

Dynamic stability and noise margins of SRAM arrays in nanoscaled technologies

Adam Shmuel Teman

SRAM stability is one of the primary bottlenecks of current VLSI system design, and the unequivocal supply voltage scaling limiter. Static noise margin metrics have long been the de-facto standard for measuring this stability and estimating the yield of SR ...

IEEE2014

Variability-Aware Design Space Exploration of Embedded Memories

Andreas Peter Burg, Georgios Karakonstantis, Shrikanth Ganapathy

With scaling of process technologies and worsening of process variations, embedded memories are susceptible to a large number of failure mechanisms making it hard to achieve high yield. In this paper, by bringing together architecture and circuit-level exp ...

2014

Unison Cache: A Scalable and Effective Die-Stacked DRAM Cache

Babak Falsafi, Ilknur Cansu Kaynak

Recent research advocates large die-stacked DRAM caches in manycore servers to break the memory latency and bandwidth wall. To realize their full potential, die-stacked DRAM caches necessitate low lookup latencies, high hit rates and the efficient use of o ...

IEEE2014

1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design

Mihai Adrian Ionescu, Arnab Biswas

In this work we propose and demonstrate the use of a Tunnel FET (TFET) as capacitorless DRAM cell based on TCAD simulations and experiments. We report more experimental results on Tunnel FETs implemented as a double-gate (DG) fully-depleted Silicon-On-Insu ...

2014

Energy/Reliability Trade-Offs in Low-Voltage ReRAM-Based Non-Volatile Flip-Flop Design

Giovanni De Micheli, Andreas Peter Burg, Davide Sacchetto, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Pascal Andreas Meinerzhagen

The total power budget of Ultra-Low Power (ULP) VLSI Systems-on-Chip (SoCs) is often dominated by the leakage power of embedded memories as well as status registers. On the one hand, supply voltage scaling down to the near-threshold (near-VT

Institute of Electrical and Electronics Engineers2014

Rebasing I/O for Scientific Computing: Leveraging Storage Class Memory in an IBM BlueGene/Q Supercomputer

Felix Schürmann, Pramod Shivaji Kumbhar, Miguel Angel Gila Arrondo, Davide Tacchella, Alessandro Curioni, Fabien Jonathan Delalondre, John Anthony Biddiscombe, Peter Morjan, Blake Fitch, Bernard Metzler, Lars Schneidenbach, Robert Germain

Storage class memory is receiving increasing attention for use in HPC systems for the acceleration of intensive IO operations. We report a particular instance using SLC FLASH memory integrated with an IBM BlueGene/Q supercomputer at scale (Blue Gene Active ...

Springer2014

Replica Technique for Adaptive Refresh Timing of Gain-Cell-Embedded DRAM

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Pascal Andreas Meinerzhagen

Gain cells have recently been shown to be a viable alternative to static random access memory in low-power applications due to their low leakage currents and high density. The primary component of power consumption in these arrays is the dynamic power cons ...

Institute of Electrical and Electronics Engineers2014

Ferroelectric translational antiphase boundaries in nonpolar materials

Nava Setter, Alexander Tagantsev, Alexander Kvasov, Xiankui Wei

Ferroelectric materials are heavily used in electro-mechanics and electronics. Inside the ferroelectric, domain walls separate regions in which the spontaneous polarization is differently oriented. Properties of ferroelectric domain walls can differ from t ...

2014

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