Nicolas GrandjeanNicolas Grandjean received a PhD degree in physics from the University ofNice Sophia Antipolis in 1994 and shortly thereafter joined the French National Center for Scientific Research (CNRS) as a permanent staff member. In 2004, he was appointed tenure-track assistant professor at the École polytechnique fédérale de Lausanne (EPFL) where he created the Laboratory for advanced semiconductors for photonics and electronics. He was promoted to full professor in 2009. He was the director of the Institute of Condensed Matter Physics from 2012 to 2016 and then moved to the University of California at Santa Barbara where he spent 6 months as a visiting professor. Since 2018, he is the head of the School of Physics at the EPFL. He was awarded the Sandoz Family Foundation Grant for Academic Promotion, received the “Nakamura Lecturer” Award in 2010, the "Quantum Devices Award” at the 2017 Compound Semiconductor Week, and “2016 best teacher” award from the EPFL Physics School. His research interests are focused on the physics of nanostructures and III-V nitride semiconductor quantum photonics.
Marco Cantoni1982-1988, Diploma course in Experimental Physics (certificate, 28.10.88)ETHZ Faculty IX MATHEMATICS and PHYSICS, Diploma Thesis: "Abweichungen von der ikosaedrischen Symmetrie in Al-Cu-Li Quasikristallen", Advisor: Prof. H.-U. Nissen 1989-1993, Ph.D. in Experimental Physics (certificate, 23.8.94) ETHZ Physics Department, Laboratory of Solid State Physics, Ph. D. Thesis No. 10421, Title: "Elektronenmikroskopische Untersuchung der Realkristallstruktur epitaktischer Schichten von Supraleitern des Typs SEBa2Cu3O7-x auf (100)-SrTiO3" Advisors: Prof. H.R. Ott, Prof. H. U. Nissen. 1994-1996,ETH Zürich,Material Science Department, Non-Metallic Materials, Prof. L. Gauckler: Microstructure characterisation of high-tech ceramic materials by means of SEM, TEM and atomic force microscopy: superconductor thick films (Bi-2212 on Ag) and solid oxide fuel cells (ZrO2, CeO2). 1996-1998, National Institute for Research in Inorganic Materials NIRIM, Japan Group for Special Research, Prof. S. Horiuchi: TEM of Bi-2223/Ag Tapes, Application of Imaging Plates (IP) in High Voltage TEM, Cryo-Lorentz-TEM of Superconducting Materials (Observation of Flux-Lines) 1998-2000, Ecole polytechnique fédéral de Lausanne, EPFL-CIME Centre interdépartemental de microscopie électronique CIME, Prof. P.A. Buffat: Projet 125, PPO II (programme prioritaire optique): Characterization of materials and devices for optic and optoelectronic applications by electron microscopy. 2001-2003, Ecole polytechnique fédéral de Lausanne, EPFL STI IMX LCCeramics Laboratory, Prof. Nava Setter Characterisation of ferroelectric materials, transmission electron microscopy of relaxor ferroelectric materials 2004, University of Geneva, Physics Department, Condensed matter Physics Group of Prof. R. Flükiger, TEM of Multifilament Nb3Sn superconducting wires, in collaboration with EPFL-CIME Since 1.11.04, EPFL-SB-CIME
Farzan JazaeriFarzan Jazaeri received his M.Sc. degree in 2009 from University of Tehran and his Ph.D. in electronic engineering from EPFL in 2015. He has been serving as Research Scientist at EPFL since 2015 and Senior RD Semiconductor Device Engineer in the Swatch Company since 2019.He is a recipient of the 2018 Electron Devices Society George E. Smith Award, the best talk award from MIXDES 2019 and the best paper awards from ESSDERC2018 and ESSDERC2019, and several other academic awards. He is also awarded an advanced Swiss National Science Foundation grant for two years fellowship in MIT and NASA. His doctoral thesis was recognized to be eligible for the IBM award in 2017. Dr. Jazaeri is currently research scientist and project leader in high level of international scientific collaborative activities at EPFL. His research activities on solid-state physics are focused on creation of the cryogenic temperature infrastructure necessary to operate the qubits for quantum computations(MOSQUITO), radiation-induced damages in advanced devices for the future high energy physics experiments at CERN (GigaRadMOST), Pinned Photodiodes for CIS, and modeling and characterization AlGaN-GaN heterostructure in collaboration with IMEC. Together with Dr. Sallese, he is the lead developer of EPFL HEMT MODEL for GaN HEMTs. He fully developed a new model (EPFL-JL Model) for the so-called nanowire FETs and was invited by Cambridge University Press to write a book on junctionless nanowire FETs, emerging nanoelectronic devices, already published since 2018. He serves as lead editor and reviewer for several scientific journals. He has been an invited keynote speaker at several international conferences and events. He is invited to MIXDES 2019 as a keynote speaker to address quantum bits and quantum computing architecture.From Jun 2009 to February 2010, he worked on designing and implementing SD/HD broadcast systems with SAMIM-RAYANEH Co., Tehran, Iran. Between March 2010 and November 2011 he worked as a SCADA expert in Tehran Regional Electric Co. (TREC), Tehran, Iran. From September 2010 to December 2011, he continued his research activities in nano-electronics in Tehran, Iran. In December 2011, he joined to Electron Device Modelling and Technology Lab (EDLab) and pursued his Ph.D. degree at EPFL. In 2015, he received his Ph.D. from Microsystems and Microelectronics department, Integrated Systems Laboratory (STI/IC) at EPFL, Lausanne, Switzerland.
