Concept

Strontium titanate

Related publications (296)

Surface optimization of RBa2Cu3O7-delta (R = Y, Nd) epitaxial high T-c films for in situ photoemission studies

One of the intrinsic difficulties for in situ photoemission studies of high T-c oxide films is the surface volatility, especially the oxygen loss. In order to solve this problem, we have constructed a dedicated system for high T-c film surface studies, in ...

2000

Niobium doping and dielectric anomalies in bismuth titanate

Nava Setter, Dragan Damjanovic

A study of the complex permittivity in bismuth titanate was conducted to reveal the nature of an anomaly in the real part of the permittivity, which occurs below the Curie temperature. This anomaly is frequency dependent and is caused by a combination of t ...

2000

Superfluid and normal-fluid densities in the high-T-c superconductors

Giorgio Margaritondo, László Forró, Helmuth Berger

In clean metallic superconductors, 100% of the mobile carriers participate ill the condensate, so that the London penetration depth (which measures the electromagnetic screening by the superconductor) indicates charge densities comparable to those inferred ...

2000

Equilibrium states and phase transitions in epitaxial ferroelectric thin films

Alexander Tagantsev

A Landau-Ginsburg-Devonshire-type thermodynamic theory is used to describe equilibrium single-domain states and phase transitions in epitaxial ferroelectric thin films. For BaTiO3 and PbTiO3 films grown on cubic substrates, the paraelectric to ferroelectri ...

1999

Ferroelectric thin films grown on tensile substrates: Renormalization of the Curie-Weiss law and apparent absence of ferroelectricity

Alexander Tagantsev

A thermodynamic theory is used to calculate the dielectric properties of epitaxial thin films grown on cubic substrates imposing biaxial tension on the film prototypic cubic state. For such "tensile" substrates, the theory shows that, in a conventional pla ...

1999

The phases of CS3Bi2I9 between RT and 190 K

Gervais Chapuis, Alla Arakcheeva

The structure of Cs3Bi2I9 has been refined to R = 0.0165 on the basis of X-ray diffraction measurements at T = 290 K (STOE IPDS diffractometer; MoKalpha-radiation; 296 nonequivalent reflection with I > 2 sigma(I)). The absorption correction was accounted f ...

1999

Influence of the deposition temperature and Pb species flux on the characteristics of PbTiO3 thin films deposited by sputtering on optical fibers

Paul Muralt

Integrated optical devices can be fabricated by the deposition of an electrode/piezoelectric/electrode multilayer thin film structure onto optical fibers, The particular structure used in this work is Au/PbTiO3/Pt/Ti, where the PbTiO3 is deposited by DC re ...

1999

Electrochemical behavior of synthetic diamond thin film electrodes

Christos Comninellis, György Foti

The inertness and unique electrochem. properties of diamond present great potential for a variety of applications in aggressive environments. Preliminary results showed the widest known electrochem. window before water decompn., allowing new possibilities ...

1999

Electrochemical behavior of synthetic boron-doped diamond thin film anodes

Christos Comninellis, Pierre-Alain Michaud, Ilaria Duo

The electrochem. behavior of some model org. compds. on boron-doped synthetic diamond thin film electrodes, obtained by HF-CVD on p-Si substrate was investigated. Only reactions involving simple electron transfer like hydroquinone/benzoquinone are active i ...

1999

Anodic oxidation of organics on synthetic diamond thin-film electrodes

Christos Comninellis

The electrochem. oxidns. of some org. compds. have shown that only reactions involving simple electron transfer are active on diamond electrodes in the potential region of water stability. For more complex reactions, diamond electrodes show no electrocatal ...

1999

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