Doping in sport

Summary

In competitive sports, doping is the use of banned athletic performance-enhancing drugs by athletic competitors, as a way of cheating. The term doping is widely used by organizations that regulate sporting competitions. The use of drugs to enhance performance is considered unethical, and is prohibited by most international sports organizations, including the International Olympic Committee. Furthermore, athletes (or athletic programs) taking explicit measures to evade detection exacerbate the ethical violation with overt deception and cheating. The origins of doping in sports go back to the very creation of sport itself. From ancient usage of substances in chariot racing to more recent controversies in doping in baseball, doping in tennis, doping at the Olympic Games, and doping at the Tour de France, popular views among athletes have varied widely from country to country over the years. The general trend among authorities and sporting organizations over the past several decades has

Official source

https://en.wikipedia.org/wiki/Doping_in_sport

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This paper presents an explicit drain current model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor. Analytical relationships for the channel charge densities and for the drain current are derived as explicit functions of applied terminal voltages and structural parameters. The model is validated with 2D numerical simulations for a large range of channel thicknesses and is found to be very accurate for doping densities exceeding 10(18) cm(-3), which are actually used for such devices. (C) 2013 Elsevier Ltd. All rights reserved.

Pergamon-Elsevier Science Ltd2013

Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Jean-Michel Sallese, Ashkhen Yesayan

The operation principle of a semiconductor nanowire (NW) ion-sensitive field-effect transistor (ISFET), denoted for pH sensing, is studied within the framework of this work. The physical processes in the system are mathematically modelled and presented in details. The dependences of the NW ISFET current-pH characteristics on NW geometrical and physical parameters are analyzed. The plots of the ISFET sensitivity versus pH at different NW radii, the thicknesses of the oxide layer, and the NW doping densities are presented. The obtained results are in qualitative agreement with the experimental data.

PLEIADES PUBLISHING INC2021

We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3483232]

2010