Radiation Hard Microelectronics

This lecture covers the design of radiation-hard microelectronics, focusing on technologies like epitaxial silicon, silicon on insulator, and silicon on sapphire substrates to improve single-event effects and total ionizing dose hardness. It also discusses radiation-hard ASIC libraries from various manufacturers and the use of CMOS epitaxial structures to reduce susceptibility to latchup events. The instructor explains the importance of rad-hard components manufacturers like ATMEL and Cobham in developing rad-hard microprocessors, ASICs, and FPGAs. Additionally, the lecture explores mitigation techniques for single-event effects at both circuit and system design levels, including redundant data, hardware, and operations, as well as error detection and correction methods like CRC, Hamming codes, and Reed-Solomon codes.