Dry Etching of Organic and Metal Films

This lecture covers the anisotropic etching of organic films using O2 plasma highly assisted by ion bombardment, with an etch rate of 1 um/min and etch products CO and H2O. It also discusses the etching of Al and Al alloys for interconnection lines in IC fabrication, emphasizing the use of chlorine chemistry due to the low vapor pressure of the etch product. Additionally, the role of Al2O3 in Al etching is explained, highlighting the need for sputtering with energetic ions and chemical reduction. Various examples of processes such as dry etching of metals and organic films are presented, along with specific details on etching Pt, Ta, W, Ti, and Mo using different chemistry and masks.