Semiconductor Theory: Low Injection Approximation

Related lectures (30)

Page 2 of 3

Covers the subthreshold operation of NMOS transistors and their current behavior in relation to gate voltage.

Covers the behavior of real PN diodes, focusing on generation and recombination currents and their implications in various operational conditions.

Covers the control of threshold voltage in semiconductor devices through oxide thickness and substrate doping adjustments.

Covers the behavior of p-n junctions, focusing on equilibrium, built-in potential, and depletion zones.

Explains the analysis of ideal p-n junction diodes, focusing on current calculations and minority carrier behavior under different bias conditions.

Covers MOS structures, charge dynamics, and the design of CMOS circuits.

Covers doping profiles in semiconductors, focusing on silicon bars doped with boron and phosphorus for applications like avalanche photodiodes.

Covers the behavior of p-n junctions at equilibrium, including voltage effects on Fermi energy and depletion regions.

Covers the origins and calculations of thermal and shot noise in diodes and transistors, emphasizing their implications in electronic components.

Covers diode equations in semiconductor devices, including dark IV curve and photocurrent.