Lecture
This lecture discusses the development of reconfigurable nanowire electronics, focusing on the challenges of traditional CMOS technology and the potential of Schottky FETs. The instructor explains the use of intrinsic silicon nanowires to create hetero junctions, control charge injection, and achieve ambipolar characteristics. By individually gating Schottky junctions, they demonstrate the ability to switch between N and P characteristics, leading to the creation of complementary inverters. The lecture also addresses issues such as high variability, low drive currents, degraded off states, and exponential turn-on behavior, proposing solutions through innovative device concepts and electrostatic control. Through transport simulations and circuit design, the potential for building complex circuits with enhanced performance is explored.