Coulomb Blockade and Single Electron Transistor

This lecture covers the concept of Coulomb blockade, where the resistance of electronic devices increases at low bias voltages due to tunnel junction capacitance. It explains how a single electron transistor (SET) operates, with detailed insights into the criteria for observing Coulomb blockade. The theory behind SET operation, including the energy considerations and the equivalent circuit, is discussed. The lecture also delves into experimental aspects of SET, showcasing device geometries and circuit schematics. Additionally, nanoscale phenomena like nanowires, nanodots, and nanoparticles are explored, along with ultrathin films and multilayers in the context of nanomagnetism.