Combining and comparing systems

This lecture covers the principles of radiation detection, focusing on semiconductor materials, such as high-purity Germanium detectors, and their operation at low temperatures. It also discusses systems like hybrid photodiodes, photomultiplier tubes, photodiodes, silicon photomultipliers, and avalanche photodiodes, highlighting their characteristics, advantages, and applications. The lecture further explores the measurement chain in radiation counting, different types of detectors, energy resolution, counting statistics, uncertainties, and the Fano factor. It concludes with a comparison between various detector types, emphasizing the superior resolution power of semiconductors over other materials.

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Related lectures (1)

Related concepts (88)

The course presents the detection of ionizing radiation in the keV and MeV energy ranges. Physical processes of radiation/matter interaction are introduced. All steps of detection are covered, as well

PIN diode

A PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts. The wide intrinsic region is in contrast to an ordinary p–n diode. The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications.

Photodiode

A photodiode is a light-sensitive semiconductor diode. It produces current when it absorbs photons. The package of a photodiode allows light (or infrared or ultraviolet radiation, or X-rays) to reach the sensitive part of the device. The package may include lenses or optical filters. Devices designed for use specially as a photodiode use a PIN junction rather than a p–n junction, to increase the speed of response. Photodiodes usually have a slower response time as their surface area increases.

Avalanche photodiode

An avalanche photodiode (APD) is a highly sensitive semiconductor photodiode detector that exploits the photoelectric effect to convert light into electricity. From a functional standpoint, they can be regarded as the semiconductor analog of photomultiplier tubes. The avalanche photodiode (APD) was invented by Japanese engineer Jun-ichi Nishizawa in 1952. However, study of avalanche breakdown, microplasma defects in silicon and germanium and the investigation of optical detection using p-n junctions predate this patent.

Wide-bandgap semiconductor

Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.

Scintigraphy

Scintigraphy (from Latin scintilla, "spark"), also known as a gamma scan, is a diagnostic test in nuclear medicine, where radioisotopes attached to drugs that travel to a specific organ or tissue (radiopharmaceuticals) are taken internally and the emitted gamma radiation is captured by external detectors (gamma cameras) to form two-dimensional images in a similar process to the capture of x-ray images.

Combining and comparing systems PHYS-452: Radiation detection

Explores the combination of systems for radiation detection, from light collection to signal amplification using various semiconductor detectors.