Magnetic Memory Technologies

This lecture covers the evolution from traditional electronic memory to spintronics, focusing on Magnetic Random Access Memory (MRAM) and its advantages over Dynamic Random-Access Memory (DRAM). It explains the principles of spin transport, the role of non-magnetic spacers, magnetoresistance, and the construction of MRAM using magnetic tunnel junctions. The instructor discusses the reading-writing process in Hard Disk Drives (HDD) and the importance of spacer materials and crystal structures in spin junction performance. Additionally, the lecture delves into MRAM writing mechanisms using magnetic fields and spin-polarized currents, as well as real-space imaging of antiferromagnetism on the atomic scale. It concludes with insights on artificially constructed quantum magnets and bistability in atomic-scale antiferromagnets.

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Spintronics

Spintronics (a portmanteau meaning spin transport electronics), also known as spin electronics, is the study of the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. The field of spintronics concerns spin-charge coupling in metallic systems; the analogous effects in insulators fall into the field of multiferroics.

Magnetic-core memory

Magnetic-core memory was the predominant form of random-access computer memory for 20 years between about 1955 and 1975. Such memory is often just called core memory, or, informally, core. Core memory uses toroids (rings) of a hard magnetic material (usually a semi-hard ferrite) as transformer cores, where each wire threaded through the core serves as a transformer winding. Two or more wires pass through each core. Magnetic hysteresis allows each of the cores to "remember", or store a state.

Memory cell (computing)

The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory.

Tunnel magnetoresistance

Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon. Magnetic tunnel junctions are manufactured in thin film technology.

Ferrimagnetism

A ferrimagnetic material is a material that has populations of atoms with opposing magnetic moments, as in antiferromagnetism, but these moments are unequal in magnitude so a spontaneous magnetization remains. This can for example occur when the populations consist of different atoms or ions (such as Fe2+ and Fe3+). Like ferromagnetic substances, ferrimagnetic substances are attracted by magnets and can be magnetized to make permanent magnets.

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