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Related publications (2)
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A high-resolution negative Calixarene resist has been used to pattern 2-nm-thick Ti O2 films on 50-nm-thick Pt layers by electron beam lithography, in order to carry out site controlled growth of Pb (Zr,Ti) O3 structures. Single dot structures have been wr ...
The origin of a recently reported peculiar phenomenon-polarization reversal against the applied electric field in ferroelectric thin films [M. Aplanalp and P. Gunter, Ferroelectrics 258, 3 (2001), T. Morita and Y. Cho, Appl. Phys. Lett. 84, 257 (2004)]-has ...
