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An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate (MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range.
The IGBT transistor, associating the conduction advantages of the bipolar transistor and the switching advantages of the MOSFET transistor, is widely used in medium and high power applications with an
The high-current delivered by a dedicated power supply is the condicio sine qua non to obtain the strong magnetic field produced by superconducting magnets. The end goal of such power supply is to con
The high-current delivered by a dedicated power supply is the condicio sine qua non to obtain the strong magnetic field produced by superconducting magnets. The end goal of such power supply is to con