Person
Igor Stolichnov
Related publications (83)
Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Sadegh Kamaei Bahmaei, Matteo Cavalieri, Carlotta Gastaldi
In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Eamon Patrick O'Connor, Francesco Bellando, Matteo Cavalieri, Carlotta Gastaldi
In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3
Mihai Adrian Ionescu, Igor Stolichnov, Felix Risch
Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-rang ...
NATURE PORTFOLIO2022Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi
HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...
AMER INST PHYSICS2021Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Hiroshi Iwai
This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy descript ...
2020Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures
Mihai Adrian Ionescu, Igor Stolichnov, Matteo Cavalieri, Carlotta Gastaldi
HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...
AMER INST PHYSICS2020Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Matteo Cavalieri
Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...
AMER CHEMICAL SOC2020Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
Mihai Adrian Ionescu, Igor Stolichnov, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi
In this work, we report an experimental investigation of pulsed laser deposition (PLD) of thin Gd:HfO2 layers at 330 degrees C, which show ferroelectric behavior after annealing at 450 degrees C, compatible with complementary metal-oxide-semiconductor back ...
AMER CHEMICAL SOC2020Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature
Mihai Adrian Ionescu, Andreas Schueler, Igor Stolichnov, Anna Krammer, Teodor Rosca, Matteo Cavalieri, Riyaz Mohammed Abdul Khadar, Andrei Müller, Fatemeh Qaderi Rahaqi
This work investigates and reports on the radio-frequency (RF) behavior in the frequency range of 5 – 35 GHz of germanium-doped (Ge-doped VO2) vanadium dioxide thin films, deposited on silicon substrates via sputtering and pulsed laser deposition (PLD) wit ...
2020Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Hiroshi Iwai
We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...
2019