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Person
Vincent Pott
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Related publications (45)
Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.
The high-mobility bended n-channel silicon nanowire transistor
Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Luca De Michielis, Mohammad Najmzadeh
This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...
Institute of Electrical and Electronics Engineers2010Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)
Mihai Adrian Ionescu, Maher Kayal, Kirsten Emilie Moselund, Vincent Pott
The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt curren ...
2009People doing similar research (34)