Publications by Mihai Adrian Ionescu

CMOS-Compatible Antiferroelectric-Dielectric Capacitors for Multifunctional Energy Storage and Tunable Electronics

This work presents a CMOS-compatible multilayer platform integrating energy storage and tunable varactor functionality within a compact system. By co-integrating antiferroelectric (AFE) and dielectric (DE) layers, the design achieves tunability up to 28%, ...

IEEE2025

Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

Mihai Adrian Ionescu, Michele Ghini

This paper introduces a novel integration method of localized metallic back-gates into fully-depleted silicon-on-insulator (FDSOI) multi-gate FETs, enabling robust front-to-back electrostatic coupling from room temperature to cryogenic conditions, without ...

2025

An Investigation of VO2 Nanowire Arrays for Integrated Sensing. From Non-Stochastic Nanowires to Stochastic Nanostructures

Mihai Adrian Ionescu, Andras Kis, Igor Stolichnov

This paper presents a novel nanoscale platform based on vanadium dioxide (VO2) two-terminal devices shaped like nanowires (NWs). For the first time we report CMOS compatible VO2 two-terminal devices with little-to-no stochasticity in the absence of electro ...

IEEE2025

Future of Computing: towards Energy Efficient Cognitive Chips

Mihai Adrian Ionescu

The exponential growth of Artificial Intelligence (AI) and the Internet of Things (IoT) demands a paradigm shift in hardware design to ensure energy-efficient, sustainable computing. This talk will explore emerging trends in low-power AI hardware for Edge ...

Institute of Electrical and Electronics Engineers Inc.2025

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films

Mihai Adrian Ionescu, Igor Stolichnov

American Chemical Society (ACS)2025

Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance

Mihai Adrian Ionescu, Igor Stolichnov

This study proposes and validates a novel CMOS-compatible ferroelectric thin-film insulator made of vanadium-doped hafnium oxide (V:HfO2) by using an optimized atomic layer deposition (ALD) process. Comparative electrical performance analysis of metal-ferr ...

AMER CHEMICAL SOC2025

Wafer-Scale Demonstration of a Highly Sensitive Strain Sensor Based on Polycrystalline VO2

Mihai Adrian Ionescu

Vanadium dioxide (VO2) exhibits structural phase transition that can be triggered by thermal, electrical, and mechanical stimuli, making it a highly interesting material for MEMS/NEMS based sensors and actuators thanks to responsivity and exceptional sensi ...

Institute of Electrical and Electronics Engineers Inc.2025

Bridging Blood and Skin: Biomarker Profiling in Dermal Interstitial Fluid (dISF) for Minimally Invasive Diagnostics

Mihai Adrian Ionescu, Yann Christophe Sprunger

Understanding the biochemical relationship between serum and dermal interstitial fluid (dISF) is critical for advancing minimally invasive diagnostics with wearables and point of care devices focusing on most relevant biomarkers accessible in the ISF. This ...

MDPI AG2025

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots (Adv. Funct. Mater. 14/2025)

Mihai Adrian Ionescu, Pasquale Scarlino, Victor Carle Adrien Boureau, Michele Ghini

Wiley2025

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots

Mihai Adrian Ionescu, Pasquale Scarlino, Victor Carle Adrien Boureau, Michele Ghini

The rise of electron spin qubit architectures for quantum computing processors has led to a strong interest in designing and integrating ferromagnets to induce stray magnetic fields for electron dipole spin resonance (EDSR). The integration of nanomagnets ...

Wiley2025