Person
Wladyslaw Grabinski
Related publications (16)
Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility
Mihai Adrian Ionescu, Didier Bouvet, Wladyslaw Grabinski, Mohammad Najmzadeh
In this paper, we report for the first time making multi-gate buckled self-aligned dual Si nanowires including two sub-100 nm cross-section cores on bulk Si substrate using optical lithography, hard mask/spacer technology and local oxidation. 0.8 GPa uniax ...
Institute of Electrical and Electronics Engineers2012Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs
Mihai Adrian Ionescu, Jean-Michel Sallese, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé
In this paper, we report, for the first time, corner effect analysis in the gate-all-around equilateral triangular silicon nanowire (NW) junctionless (JL) nMOSFETs, from subthreshold to strong accumulation regime. Corners were found to accumulate and deple ...
Institute of Electrical and Electronics Engineers2012Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
Mihai Adrian Ionescu, Didier Bouvet, Wladyslaw Grabinski, Mohammad Najmzadeh
In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ~400 K and carrier mobil ...
2011Accumulation-Mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain
Mihai Adrian Ionescu, Didier Bouvet, Wladyslaw Grabinski, Mohammad Najmzadeh
In this work we report dense arrays of highly doped gate-all-around Si nanowire accumulation-mode nMOSFETs with sub-5 nm cross-sections. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ≥ 2.5 GPa uniaxi ...
2011An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs
Wladyslaw Grabinski, Antonios Bazigos, Matthias Bucher
The constant-current (CC) method uses a current criterion to determine the threshold voltage (VTH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the same current criterion in both saturation and linear modes leads to incon ...
2011Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling
Mihai Adrian Ionescu, Didier Bouvet, Wladyslaw Grabinski, Mohammad Najmzadeh
In this paper, we demonstrate the integration of local oxidation and metal-gate strain technologies to induce 3.3%/5.6 GPa uniaxial tensile strain/stress in 2 μm long suspended Si nanowire MOSFETs, the highest process-based stress record in MOSFETs until n ...
2011