Fabrizio Lo Conte

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Related publications (15)

A circuit-level substrate current model for smart-power ICs

Maher Kayal, Jean-Michel Sallese, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The model is based on a new compact model o ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

9 MHz vibrating body FET tuning fork oscillator

Mihai Adrian Ionescu, Maher Kayal, Daniel Grogg, Fabrizio Lo Conte

A 9.4MHz micro-electromechanical oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) is presented in this work. The tuning fork VB-FET used in this work provides a high quality factor of 9400 in the open-loop configuration and a low equiv ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Global 2D modeling of minority and majority substrate coupled currents

Maher Kayal, Jean-Michel Sallese, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a modeling strategy to simulate 2D propagation of electrical perturbations induced by direct biasing of substrate junctions. Identifying parasitic substrate devices such as bipolar transistors reaches rapidly its limit when multiple cur ...

2009

High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor

Mihai Adrian Ionescu, Maher Kayal, Daniel Grogg, Fabrizio Lo Conte

In this paper, an oscillator based on a Vibrating Body Field Effect Transistor (VB-FET) working at 9.4MHz is presented. The electrical characteristics of this active MEM resonator are detailed for static and dynamic operation. The benefit of the intrinsic ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Substrate current modeling for high-voltage smart power BCD technology

Maher Kayal, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a compact- and a macro-model for estimating and simulating the perturbations induced in the substrate by high-voltage transistors switching inductive loads. On one hand, it allows the designer to predict the amount of switching noise ge ...

2008

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