Publications by Alexandru Mereuta

Electrically pumped shot-noise limited class A VECSEL at telecom wavelength

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman

Class A shot-noise limited operation is achieved in an electrically pumped vertical external cavity surface emitting laser (VECSEL), opening the way for integration of such peculiar noiseless laser oscillation in applications where low power consumption an ...

2021

Single crystal diamond gain mirrors for high performance vertical external cavity surface emitting lasers

Niels Quack, Grigore Suruceanu, Gergely Huszka, Alexandru Mereuta, Andrei Caliman, Pascal Gallo, Mehdi Naamoun

We report on the design, fabrication and optical performance of gain mirrors in single crystal diamond substrates for vertical external cavity surface emitting lasers (VECSELs). VECSELs have gained attention recently due to their potential for high emissio ...

2020

High-Power 760 nm VECSEL Based on Quantum Dot Gain Mirror

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Nicolas Chevalier

We report high-power second-harmonic generation of 760 nm laser light from optically-pumped vertical-external-cavity surface-emitting laser based on quantum dot active medium. The laser generates 1.2 W in fundamental transverse mode with fixed linear polar ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

InAs/InP quantum dot VECSEL emitting at 1.5 mu m

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 mu m is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission w ...

AMER INST PHYSICS2019

Flip-Chip Wafer-Fused OP-VECSELs Emitting 3.65 W at the 1.55-mu m Waveband

Elyahou Kapon, Alok Rudra, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Pascal Gallo

Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55 mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlA ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Mode Coupling Measurement in Dual-Frequency Quantum Well-based VECSEL

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman

We experimentally investigate the Lamb coupling constant C in InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser emitting at 1.54 mu m is designed to sustain the oscillation of two orthogonally polariz ...

IEEE2019

Direct measurement of the spectral dependence of Lamb coupling constant in a dual frequency quantum well-based VECSEL

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman, Salvatore Pes

Spectral dependence of Lamb coupling constant C is experimentally investigated in an InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser is designed to sustain the oscillation of two orthogonally polari ...

2019

1.55-mu m wavelength wafer-fused OP-VECSELs in flip-chip configuration

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman, Pascal Gallo

Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55-mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlA ...

SPIE-INT SOC OPTICAL ENGINEERING2019

25 Gbps direct modulation and 10 km data transmission with 1310 nm waveband wafer fused VCSELs

Elyahou Kapon, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman

Direct modulation at > 25 Gbps is achieved with 1310 nm wavelength wafer fused VCSELs by adjusting the strain in the quantum well active region and the cavity photon lifetime. 25 + Gbps large signal modulation with 10(-12) BER at 1310 nm across 10 km of st ...

Optical Soc Amer2016

>25 Gbps direct modulation and data transmission with 1310 nm waveband wafer fused VCSELs

Elyahou Kapon, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman

25 Gb/s transmission over 10 km of standard single mode fiber is demonstrated for 1300 nm wafer fused InP/GaAs VCSELs with increased strain in quantum wells and higher output coupling from the cavity. ...

Ieee2016