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The motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain-wall motion through the ferroelectric material is, however, hindered by pinning on crystal defects, ...
Miniaturization of conventional field effect transistors (FETs) approaches the fundamental limits beyond which opening and closing the transistor channel require higher gate voltage swing and cause higher power dissipation and heating. This problem could b ...
It is known that the permittivity of ferroelectric polydomain films and single crystals in weak electric fields is strongly enhanced by the reversible movement of pinned domain walls. Two mechanisms of the movement exist: first, the bending of free segment ...