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Prof. Oleg Yazyev (Олег Язев) was born in Simferopol, Crimean peninsula. He obtained his degree in chemistry from Moscow State University in 2003. He then joined Ecole Polytechnique Fédérale de Lausanne (EPFL) completing his PhD thesis in chemistry and chemical engineering in 2007. Next two years he has spent as a postdoctoral fellow at the Institute of Theoretical Physics (ITP) and the Institute for Numerical Research in the Physics of Materials (IRRMA) of the same institution. In 2009-2011 he was a postdoctoral fellow at the Department of Physics of the University of California, Berkeley and the Lawrence Berkeley National Laboratory. In September 2011 he started an independent research group supported by the Swiss National Science Foundation professorship grant. In 2012 he was awarded an ERC Starting grant. His current research focuses on theoretical and computational physics of two-dimensional and topological materials with strong emphasis on their prospective technological applications. ResearcherID profile of Oleg Yazyev Google Scholar profile of Oleg Yazyev

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Graphene

Graphene (ˈgræfiːn) is an allotrope of carbon consisting of a single layer of atoms arranged in a hexagonal lattice nanostructure. Th

Topological insulator

A topological insulator is a material whose interior behaves as an electrical insulator while its surface behaves as an electrical conductor, meaning that electrons can only move along the surface o

Electronic band structure

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy th

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Ahmet Avsar, Kristians Cernevics, Cheol Yeon Cheon, Juan Francisco Gonzalez Marin, Hyungoo Ji, Andras Kis, Mukesh Kumar Tripathi, Zhenyu Wang, Oleg Yazyev, Yanfei Zhao

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is imperative to understand and characterize the influence of defects in this class of materials. Here, we examine the electrical response of defect filling and emission using deep level transient spectroscopy (DLTS) and reveal defect states and their hybridization in a monolayer MOCVD-grown material deposited on CMOS-compatible substrates. Supported by aberration-corrected STEM imaging and theoretical calculations, we find that neighboring sulfur vacancy pairs introduce additional shallow trap states via hybridization of individual vacancy levels. Even though such vacancy pairs only represent ~10% of the total defect concentration, they can have a substantial influence on the off currents and switching slopes of field-effect transistors based on 2D semiconductors. Our technique, which can quantify the energy states of different defects and their interactions, allows rapid and nondestructive electrical characterization of defect states important for the defect engineering of 2D semiconductors.

2023

From defect to effect: controlling electronic transport in chevron graphene nanoribbons

Kristians Cernevics, Oleg Yazyev

While bottom-up synthesis allows for precise control over the properties of graphene nanoribbons (GNRs), the use of certain precursor molecules can result in edge defects, such as missing benzene rings that resemble a 'bite'. We investigate the adverse effect of the 'bite' defects on the electronic transport properties in three chevron-type GNRs and discover that the extent of scattering is governed by the different defect positions. Applying the concepts learned in single GNRs, we engineer defects in two nanostructures to construct prototypical components for nanoelectronics. First, we design a switch, consisting of three laterally fused fluorenyl-chevron GNRs, and place a pair of 'bite' defects to effectively allow the switching between four binary states corresponding to distinct current pathways. Second, we show that conscientious placement of a 'bite' defect pair can increase conductance between two leads in a triple chevron GNR junction. Overall, we outline how the incorporation of 'bite' defects affects transport properties in chevron-type nanostructures and provide a guide on how to design nanoelectronic components.

IOP Publishing Ltd2023

Origin of metallic-like behavior in disordered carbon nano-onions

Kristians Cernevics, Oleg Yazyev

Carbon nano-onions are a class of nanomaterials that can exhibit long electron spin relaxation times at room temperature and thus hold promise as potential building blocks for spintronics and quantum information processing devices. Despite first being synthesized 30 years ago, there exists a gap in understanding electronic and magnetic properties of these nanostructures. Here we investigate the origin of the metallic-like behavior that has been observed experimentally in disordered nano-onions. Employing a density functional tight-binding approach and starting from ordered multi-shell fullerenes, we develop realistic models of highly disordered nano-onions comprised of nanometer-scale graphitic flakes. We find that multiple parameters such as flake size, edge structure and substituent groups can give rise to in-gap metallic states, effectively closing the HOMO-LUMO gap.

PERGAMON-ELSEVIER SCIENCE LTD2023

PHYS-310: Solid state physics II

This course gives an introduction into Solid State Physics (crystal structure of materials, electronic and magnetic properties, thermal and electronic transport). The course material is at the level of Ashcroft & Mermin and is addressed to the 3rd year students in Physics.

PHYS-332: Computational physics III

This course teaches the students practical skills needed for solving modern physics problems by means of computation. A number of examples illustrate the utility of numerical computations in various domains of physics.

PHYS-425: Quantum physics III

To introduce several advanced topics in quantum physics, including semiclassical approximation, path integral, scattering theory, and relativistic quantum mechanics