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Fabien Devynck

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Fabien Devynck

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Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals

Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO2 interface through hybrid functionals

First-principles study of defects at the SiC/SiO2 interface through hybrid functionals

Band gap opening at the 6H-SiC(0001) surface passivated by an epitaxial silicon oxynitride layer: A first-principles investigation

Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations

Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties

Semiconductor defects at the 4H-SiC(0001)/SiO2 interface

Electronic properties of an epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface: A first-principles investigation

Abrupt model interface for the 4H(1000)SiC-SiO2 interface