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Montserrat Fernandez-Bolanos Badia

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Related publications (53)

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Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Josef Weber

We demonstrate that fine-pitch TSV technology can be exploited to fabricate micro-inductors on high resistivity substrate, with record-high inductance per area and preserving their performance at GHz frequencies. We report an extensive experimental study o ...

2015

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Antonio Paone

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2). We present the advantages of VO2-based capacitors over alternative technologies for micr ...

2015

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The working principle of an electromechanical resonator for mass sensing applications is based on monitoring the characteristic resonance frequency downshift due to the particles attachment on the surface of the device. Solid-Gap Vibrating-Body Field Effec ...

Elsevier Science Bv2015

A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon

Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Daniel Grogg

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digit ...

IEEE2014

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IEEE2014

Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Daniel Grogg, Yu Pu

Nowadays, electronics face a challenge regarding the power consumption of integrated circuits (ICs). There is a need for new devices that can provide improved switching capabilities. The downscaled electrostatically actuated ohmic switch, as a (re)emerging ...

Ieee-Inst Electrical Electronics Engineers Inc2014

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We present the design considerations of an autonomous wireless sensor and discuss the fabrication and testing of the various components including the energy harvester, the active sensing devices and the power management and sensor interface circuits. A com ...

Springer2014

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A 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array of fully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for th ...

Elsevier Science Sa2014

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In this work we present an ultra-high-frequency (UHF) single crystal silicon ring resonator with two embedded FETs. Electromechanical coupling is realized through a high-K, namely 10 nm HfO2, dielectric solid-gap sandwiched between the gate electrode and t ...

2014

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A 3D vertically stacked silicon nanowire (SiNW) and Fin field effect transistor (FET) featuring a high density array (7 or 8 x 20 SiNWs, > 4 Fins vertically stacked) of fully depleted, ultra-thin (SiNWs diameters similar to 15-30 nm, Fin width/height fw si ...

Elsevier2014