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Peter Broqvist

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Alignment of defect levels and band edges through hybrid functionals: Effect of screening in the exchange term

Formation of substoichiometric GeOx at the Ge-HfO2 interface

Electron trapping in substoichiometric germanium oxide

A hybrid functional scheme for defect levels and band alignments at semiconductor-oxide interfaces

Hybrid-functional calculations with plane-wave basis sets: Effect of singularity correction on total energies, energy eigenvalues, and defect energy levels

Band offsets at the Ge/GeO2 interface through hybrid density functionals

First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack

First principles study of substoichiometric germanium oxides

Atomistic model structure of the Ge(100)-GeO2 interface

Defect energy levels in density functional calculations: Alignment and band gap problem