Publications by Philippe Wyss | EPFL Graph Search

Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells

Christophe Ballif, Quentin Thomas Jeangros, Antoine Descoeudres, Andrea Ingenito, Arnaud Walter, Sylvain Nicolay, Soo-Jin Moon, Philippe Wyss

Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silico ...

Royal Soc Chemistry2023

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann, Père Roca i Cabarrocas

In this article, the effect of the various processing steps during the fabrication of c-Si/SiOx/SiCx fired passivating contacts on the silicon bulk lifetime is studied, and the kinetics of defect deactivation by hydrogenation is investigated. It is found t ...

2022

Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods

Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann

This study evaluates the secondary electron (SE) dopant contrast in scanning electron microscopy (SEM) and helium ion microscopy (HIM) on boron implanted silicon sample. Complementary techniques like secondary ion mass spectrometry and electrochemical capa ...

IOP PUBLISHING LTD2021

Implementation and understanding of p plus fired rear hole selective tunnel oxide passivating contacts enabling > 22% conversion efficiency in p-type c-Si solar cells

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Sofia Libraro, Matthieu Despeisse, Sylvain Nicolay, Philippe Wyss

Passivating contacts are key enablers for high efficiency c-Si solar cells. Here, we present our latest advancement in terms of implementation and understanding in fired passivating contacts (FPC) used as rear p + passivating contact in p-type solar cells. ...

ELSEVIER2021

Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Andrea Ingenito, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and ...

2021

A Mixed-Phase SiOx Hole Selective Junction Compatible With High Temperatures Used in Industrial Solar Cell Manufacturing

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Xavier Niquille, Andrea Ingenito, Philippe Wyss, Matthieu Despeisse, Mario Joe Lehmann, Gizem Nogay, Josua Andreas Stückelberger

We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing with phosphorus-diffused front side. Our contact structure consists of a thin SiOx tunneling layer grown by wet chemistry and a stack of laye ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Andrea Ingenito, Matthieu Despeisse, Philippe Wyss, Mario Joe Lehmann

High temperature passivating contacts for c-Si based solar cells are intensively studied because of their potential in boosting solar cell efficiency while being compatible with industrial processes at high temperatures. In this work, the hydrogenation mec ...

2019

Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Christophe Ballif, Andrea Ingenito, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger, Luca Gnocchi

We present an electron selective passivating contact based on a tunneling SiOx capped with a phosphorous doped siliconcarbideandpreparedwithahigh-temperaturethermalanneal. We investigate in detail the effects of the preparation conditions of theSiCx(n)(i.e ...

2018

Recombination Analysis of Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts for Silicon Solar Cells

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger

2018

Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Andrea Ingenito, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger, Iris Anita Mack

2018