Publications by Steven Konezny

Hopping and trapping mechanisms in organic field-effect transistors

Libero Zuppiroli, Marie-Noëlle Bussac, Steven Konezny

A charge carrier in the channel of an organic field-effect transistor (OFET) is coupled to the electric polarization of the gate in the form of a surface Fröhlich polaron [N. Kirova and M. N. Bussac, Phys. Rev. B 68, 235312 (2003)]. We study the effects of ...

2010

Trap-limited transport in rubrene transistors

Libero Zuppiroli, Marie-Noëlle Bussac, Steven Konezny

The charge carrier mobility in the transport channel of an organic transistor is estimated within the framework of a trap-and-release model. The model accounts for the observed dependence of the mobility on the dielectric constant "epsilon" of the gate ins ...

AIP American Institute of Physics2009

Charge transport mechanisms in microcrystalline silicon

Libero Zuppiroli, Marie-Noëlle Bussac, Steven Konezny

A heterogeneous charge transport model for microcrystalline silicon based on fluctuation-induced tunneling is presented that fits the low-temperature saturation observed in dark conductivity measurements and accounts for the film microstructure. Excellent ...

AIP American Institute of Physics2008

Charge transport mechanisms in organic and microcrystalline silicon field-effect transistors

Libero Zuppiroli, Marie-Noëlle Bussac, Steven Konezny

Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at di ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2007