Publications by Evgeny Mikheev

Ionic Liquid Gating of SrTiO3 Lamellas Fabricated with a Focused Ion Beam

Amelia Emily-Kay Estry, Philip Johannes Walter Moll, Evgeny Mikheev

In this work, we combine two previously incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal challenge for th ...

AMER CHEMICAL SOC2022

Magnetic domain wall propagation under ferroelectric control

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester, Evgeny Mikheev

Control of magnetic domain walls (DWs) and their propagation is among the most promising development directions for future information-storage devices. The well-established tools for such manipulation are the spin-torque transfer from electrical currents a ...

American Physical Society2012

Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)

Nava Setter, Igor Stolichnov, Zhouji Huang, Evgeny Mikheev

We demonstrate charge-mediated and non-volatile control of anisotropic magnetoresistance (AMR) in a dilute magnetic semiconductor (Ga,Mn)(As, P) with an integrated polymer ferroelectric gate. The persistent electric field associated with switchable polariz ...

American Institute of Physics2012

Cold-Field Switching in PVDF-TrFE Ferroelectric Polymer Nanomesas

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Evgeny Mikheev

Polarization reversal in ferroelectric nanomesas of polyvinylidene fluoride with trifluoroethylene has been probed by ultrahigh vacuum piezoresponse force microscopy in a wide temperature range from 89 to 326 K. In dramatic contrast to the macroscopic data ...

American Physical Society2012

Polarization screening in polymer ferroelectric films: Uncommon bulk mechanism

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Evgeny Mikheev

Charge compensation at the interface is a fundamental phenomenon determining the operation conditions of thin-film devices incorporating ferroelectrics. The underlying mechanisms have been thoroughly addressed in perovskite ferroelectrics where the charge ...

American Institute of Physics2012

Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors

Nava Setter, Igor Stolichnov, Sebastian Riester, Evgeny Mikheev

Ferroelectric copolymers of polyvinylidene fluoride and trifluoroethylene are attractive gate materials because of a rather high remanent polarization, low dielectric permittivity, and easy integration on semiconductors due to the low processing temperatur ...

2011