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In this work a quasi-analytical physical model for the accurate prediction of the potential of GAA nanowire transistors with an arbitrary regular polygon as a cross section is developed. Two case studies concerning triangular and square cross-sections are ...
We report for the first time the optimization of the channel lateral strain profile as a new technological booster for improved performance of multi-gate n-channel MOSFET. We find that quasi-uniform or flat-Gaussian-close-to-the-drain profiles are optimum ...
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