Christophe Ballif, Arvind Shah, Sylvain Dunand, Matthieu Despeisse, François Eric Powolny
Radiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high- energy 24 GeV proton beam up to fluences of 2x1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diode ...
2006