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Zuhal Tasdemir

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Related publications (10)

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Understanding the mechanical behavior of silicon nanowiresis essentialfor the implementation of advanced nanoscale devices. Although bendingtests are predominantly used for this purpose, their findings shouldbe properly interpreted through modeling. Variou ...

AMER CHEMICAL SOC2023

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Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size lead ...

AMER CHEMICAL SOC2022

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This work proposes a new approach to characterize the mechanical properties of nanowires based on a combination of nanomechanical measurements and models. Silicon nanowires with a critical dimension of 90 nm and a length of 8 mu m obtained through a monoli ...

SPRINGER HEIDELBERG2021

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Silicon nanowire-based sensors find many applications in micro- and nano-electromechanical systems, thanks to their unique characteristics of flexibility and strength that emerge at the nanoscale. This work is the first study of this class of micro- and na ...

INT UNION CRYSTALLOGRAPHY2020

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A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Top-Down Technique for Scaling toNnano in Silicon MEMS

Yusuf Leblebici, Zuhal Tasdemir, Mustafa Yilmaz, Yasin Kilinc

Nanoscale building blocks impart added functionalities to microelectromechanical systems (MEMS). The integration of silicon nanowires with MEMS-based sensors leading to miniaturization with improved sensitivity and higher noise immunity is one example high ...

American Vacuum Society2017

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extrem ...

Institute of Physics2016

Determination of the Elastic Behavior of Silicon Nanowires within a Scanning Electron Microscope

Yusuf Leblebici, Zuhal Tasdemir

Three-point bending tests were performed on double-anchored, < 110 > silicon nanowire samples in the vacuum chamber of a scanning electron microscope ( SEM) via a micromanipulator equipped with a piezoresistive force sensor. Nanowires with widths of 35nm a ...

Hindawi Limited2016

Single Suspended Silicon Nanowire Fabrication With Ultra-Deep Trench Etching

Davide Sacchetto, Zuhal Tasdemir

For the last 60 years, a dramatic downscaling of electronics has taken place. This trend of miniaturization has gained the support of the industry and the roadmap for downscaling and introducing new technologies in the semiconductor industry has been well ...

2014

Top-Down Fabrication of Silicon Nanowires in Ultra-deep Trenches

Georg Fantner, Davide Sacchetto, Yusuf Leblebici, Oliver Peric, Zuhal Tasdemir

One-Dimensional (1D) nanostructures have gained a considerable attention in the field of semiconductor technology for the past several decades. With the help of rapid development in the process technology, it becomes possible to scale these nanostructures ...

2014