Alfredo Pasquarello, Hannu-Pekka Komsa
Charge transition levels of dangling bonds in III-V semiconductors (AlAs, GaAs, and InAs) are determined via hybrid density-functional calculations. In GaAs, the Ga and As levels are found at 0.28 eV below the conduction band and at 0.16 eV above the valen ...
American Institute of Physics2010