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Bulk CMOS technologies left the semiconductor market to the novel device geometries such as FDSOI and FinFET below 30 nm, mainly due to their insufficient electrical characteristics arising from different physical limitations. These innovative solutions en ...
Self-heating effects became more prominent with the introduction of the modern devices like FDSOI and low thermal conductivity materials such as SiO2. Consequently, the design of high speed digital circuits which are the time-critical blocks of high perfor ...