Anna Fontcuberta i Morral, Federico Matteini, Dmitry Mikulik, William Craig Carter, Gözde Tütüncüoglu, Heidi Andrea Potts, Jean-Baptiste Leran, Jelena Vukajlovic Plestina
Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...
American Chemical Society2016