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Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).
Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass. In PCM, heat produced by the passage of an electric current through a heating element generally made of titanium nitride is used to either quickly heat and quench the glass, making it amorphous, or to hold it in its crystallization temperature range for some time, thereby switching it to a crystalline state.
Artificial neural networks (ANNs, also shortened to neural networks (NNs) or neural nets) are a branch of machine learning models that are built using principles of neuronal organization discovered by connectionism in the biological neural networks constituting animal brains. An ANN is based on a collection of connected units or nodes called artificial neurons, which loosely model the neurons in a biological brain. Each connection, like the synapses in a biological brain, can transmit a signal to other neurons.
Crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing highly energy-efficient neuromorphic computing systems. For Deep Neural Networks (DNN), where informat