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Teodor Rosca

Related publications (16)

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In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-met ...

SPRINGERNATURE2023

Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron

Mihai Adrian Ionescu, Teodor Rosca

In this work, we investigate the intrinsic cycle-to-cycle variations in a spiking temperature-sensitive neuron, based on the resistive switching of a Vanadium dioxide (VO2) two-terminal device. We study how this phenomenon impacts the spike rate jitter, an ...

New York2023

Energy Efficient Sensing using Steep Slope Devices

Teodor Rosca

Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves ourlives in many aspects, but comes with several challenges related to the technology deployment atlarge scales. Handling ever growing amounts of information t ...

EPFL2022

Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes

Mihai Adrian Ionescu, Teodor Rosca

Highly energy-efficient wireless sensor nodes are a prerequisite for a sustainable operation of the Internet of things. Therefore, classical approaches for system design based on digital signal processing are not a viable solution, but system design has to ...

IEEE2022

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HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Teodor Rosca, Sadegh Kamaei Bahmaei, Matteo Cavalieri, Carlotta Gastaldi, Luca Capua

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

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In this work we propose and experimentally validate a relaxation spiking oscillator architecture with ultra-high tuning range (higher than 400%, from 5KHz to more than 25kHz when the control voltage is varied from 2.5 to 5V) that exploits the reversible me ...

IEEE2021

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Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

AMER CHEMICAL SOC2020

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This work investigates and reports on the radio-frequency (RF) behavior in the frequency range of 5 – 35 GHz of germanium-doped (Ge-doped VO2) vanadium dioxide thin films, deposited on silicon substrates via sputtering and pulsed laser deposition (PLD) wit ...

2020

Sensing device for sensing minor charge variations

Mihai Adrian Ionescu, Teodor Rosca, Cem Alper

A charge sensing device for sensing charge variations in a charge storage area includes: a TFET having at least one sense gate; and a capacitive coupling for coupling the charge storage area with the sense gate. ...

2019