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Mohammad Nasr Esfahani

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Related publications (8)

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Surface functionalization of 1D materials such as silicon nanowires is a critical preparation technology for biochemical sensing. However, existing nonselective functionalization techniques result in nonlocal binding and contamination, with potential devic ...

Amer Chemical Soc2024

Nanomechanical Modeling of the Bending Response of Silicon Nanowires

Yusuf Leblebici, Zuhal Tasdemir, Mohammad Nasr Esfahani, Mustafa Yilmaz

Understanding the mechanical behavior of silicon nanowiresis essentialfor the implementation of advanced nanoscale devices. Although bendingtests are predominantly used for this purpose, their findings shouldbe properly interpreted through modeling. Variou ...

AMER CHEMICAL SOC2023

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Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size lead ...

AMER CHEMICAL SOC2022

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This work proposes a new approach to characterize the mechanical properties of nanowires based on a combination of nanomechanical measurements and models. Silicon nanowires with a critical dimension of 90 nm and a length of 8 mu m obtained through a monoli ...

SPRINGER HEIDELBERG2021

Piezoresistivity characterization of silicon nanowires through monolithic MEMS

Yusuf Leblebici, Mohammad Nasr Esfahani

This paper presents a monolithic approach for the integration of silicon nanowires (Si NWs) with microelectromechanical systems (MEMS). The process is demonstrated for the case of co-fabrication of Si NWs with a 10-μm-thick MEMS on the same silicon-on-insu ...

2017

Superplastic behavior of silica nanowires obtained by direct patterning of silsesquioxane-based precursors

Yusuf Leblebici, Mohammad Nasr Esfahani, Mustafa Yilmaz

Silica nanowires spanning 10 μm-deep trenches are fabricated from different types of silsesquioxane-based precursors by direct e-beam patterning on silicon followed by release through deep reactive ion etching. Nanowire aspect ratios as large as 150 are ac ...

Institute of Physics2017

A Monolithic Approach to Downscaling Silicon Piezoresistive Sensors

Yusuf Leblebici, Mohammad Nasr Esfahani

Multi-scale integration remains the primary challenge in the fabrication of miniature piezoresistive sensors, as the co-fabrication of a silicon nanowire along with a microscale shuttle is the main architecture facilitating high-sensitivity transduction. T ...

Institute of Electrical and Electronics Engineers2017

Monolithic technology for silicon nanowires in high-topography architectures

Yusuf Leblebici, Mohammad Nasr Esfahani, Mustafa Yilmaz

Integration of silicon nanowires (Si NWs) in three-dimensional (3D) devices including integrated circuits (ICs) and microelectromechanical systems (MEMS) leads to enhanced functionality and performance in diverse applications. The immediate challenge to th ...

Elsevier2017