This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.
The project focuses on etching properties of the atomic layer deposition (ALD) of Al2O3. For this purpose, etching processes such as plasma etch with sulfur hexafluoride (SF6), gas etch with xenon difluoride (XeF2), wet etch with MIF developer (726 MIF) as ...