Publications by Augusto Ronchini Ximenes

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

\times

(8

\times

8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

Oscillator arrangement for time-to-digital converter for large array of time-of-flight image sensor devices

Edoardo Charbon, Preethi Padmanabhan, Augusto Ronchini Ximenes

An oscillator arrangement for time-to-digital converters for a 3D image sensor device includes a plurality of oscillators arranged as an array each oscillator being associated to one time-to-digital converter, and at least one coupling unit respectively ar ...

2019

Photon detecting 3d imaging sensor device

Edoardo Charbon, Preethi Padmanabhan, Augusto Ronchini Ximenes

The invention relates to a photon detecting 3D imaging sensor device for detecting a distance information for pixels in an image, comprising: - an array of detector units, wherein each detector unit is configured to receive a light signal pulse and to prov ...

2019

Mutually Coupled Time-to-Digital Converters (TDCs) for Direct Time-of-Flight (dTOF) Image Sensors

Edoardo Charbon, Preethi Padmanabhan, Augusto Ronchini Ximenes

Direct time-of-flight (dTOF) image sensors require accurate and robust timing references for precise depth calculation. On-chip timing references are well-known and understood, but for imaging systems where several thousands of pixels require seamless refe ...

2018

A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

Light detection and ranging (LiDAR) systems based on direct time-of-flight (DTOF) are used in spacecraft navigation, assembly-line robotics, augmented and virtual reality (AR/VR), (drone-based) surveillance, advanced driver assistance systems (ADAS), and a ...

2018

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P + /Deep N-well junction with a circular shape, for whi ...

2018

A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology, 2017 IEEE International Electron Devices Meeting (IEDM)

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

We report on the world's first back-illuminated 3D-stacked single-photon avalanche diode (SPAD) in 45nm CMOS technology. This SPAD achieves a dark count rate of 55.4cps/μm 2 , a maximum photon detection probability of 31.8% at 600nm, over 5% in the 420-920 ...

2018

Augusto Ronchini Ximenes

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A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Oscillator arrangement for time-to-digital converter for large array of time-of-flight image sensor devices

Photon detecting 3d imaging sensor device

Mutually Coupled Time-to-Digital Converters (TDCs) for Direct Time-of-Flight (dTOF) Image Sensors

A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology, 2017 IEEE International Electron Devices Meeting (IEDM)

A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology, 2017 IEEE International Electron Devices Meeting (IEDM)

Photon detecting 3d imaging sensor device

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression

Mutually Coupled Time-to-Digital Converters (TDCs) for Direct Time-of-Flight (dTOF) Image Sensors

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Oscillator arrangement for time-to-digital converter for large array of time-of-flight image sensor devices