A fin field-effect transistor (FinFET) based semiconductor memory array having a plurality of memory cells, each memory cell including a write transistor having a write wordline gate over a first fin connected to a write wordline gate contact, a write bitl ...
One of the vital components of Very Large Scale Integration (VLSI) is embedded memories. Embedded memories are widely used in various system-on-chip (SoC) architectures, including communication systems, consumer electronics, and the automotive applications ...
Gain-cell embedded dynamic random access memory (GC-eDRAM) has emerged as a suitable choice for embedded memory implementation due to its high density, low leakage current, and voltage scaling compatibility. This work presents a 16-kB 3T-1C GC-eDRAM macro, ...
Gain-cell embedded DRAM (GC-eDRAM) is a high-density logic-compatible alternative to conventional static random-access memory (SRAM) and embedded DRAM (eDRAM). However, GC-eDRAM suffers from a reduced data retention time (DRT) at deeply-scaled process node ...
