—Evidence of Enhanced Low-Dose-Rate Sensitivity (ELDRS) in TID-induced leakage current increase was observed in ring-oscillators and SRAMs in 28nm CMOS technology exposed to ultra-high doses. Elevated temperature irradiation on isolated devices is used to ...
Ionizing and non-ionizing radiation is known to cause damages in electronic components, resulting in reduced performance and possible failure. This is a major issue for any application where electronics operate in a radioactive environment. An extreme exam ...
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon -On -Insulator (FDSOI) technology exposed to ultra -high total ionizing dose (TID) was investigated. Custom structures including n- and p -channel devices with different sizes and ...
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (i ...
