Low‐Temperature EBIC Study of Zn‐Diffused GaAs p‐n Junctions
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A study on the effect of growth interruptions on InAs/InP strained quantum wells (QW) by cathodoluminescence (CL) at helium temperature and transmission electron microscopy (TEM) is reported. The samples are grown by chemical beam epitaxy (CBE) with and wi ...
The cathodoluminescence mode of the scanning electron microscope is used for the first time to investigate the lateral dependence of the electron-hole pair generation by the electron beam of the scanning electron microscope m semiconducting material. A mul ...
We report a cathodoluminescence (CL) study at helium temperature of oval defects on quantum well (QW) structures grown by molecular beam epitaxy (MBE). We collected the luminescence emitted both from the facet shaped defect and from the defect free growth ...
A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were ...