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Role of Point-Defects in the Silicon Diffusion in Gaas and Al0.3ga0.7as and in the Related Superlattice Disordering

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Role of Point-Defects in the Silicon Diffusion in Gaas and Al0.3ga0.7as and in the Related Superlattice Disordering

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Effects of background n- and p-type doping on Zn diffusion in GaAs AlGaAs multiple-quantum-well structures

Background Si-doping effects on Zn diffusion-induced disordering in GaAs/AlGaAs multiple-quantum-well structures

Optimum channel thickness of Al0.3Ga0.7As/In0.25Ga0.75As/GaAs heterostructures for electron transport applications

Amorphous Silicon p-i-n Diodes, deposited by the VHF-GD Process: New Experimental Results

Compensation of the Dangling-Bond Space-Charge in Amorphous Silicon Solar Cells by Graded Low-Level Doping in the Intrinsic Layer

Physical properties of semi-insulating polycrystalline silicon. III. Infrared diagnosis of the polycrystalline-Si/c-Si interface

Characterization of Semiconductor-Materials by Wtem and Sims

Effects of Post-Diffusion Annealing on Zn-Diffused Gaas-Si

Zinc Diffusion in Gaas and Zinc-Induced Disordering of Gaas Algaas Multiple Quantum-Wells - a Multitechnique Study