Effects of background n- and p-type doping on Zn diffusion in GaAs AlGaAs multiple-quantum-well structures
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The vacuum deposition of complex functional molecules and nanoparticles by thermal sublimation is often hindered due to their extremely low vapor pressure. This especially impedes the application of ultrahigh vacuum (UHV) based analytical and surface modif ...
Taking advantage of the electrochemical aspects of electrospray ionization (ESI) sources in positive ionization mode mass spectrometry (MS), aqueous copper complexes are electrogenerated using sacrificial copper electrodes. When using 8-hydroxyquinoline or ...
The diffusion of Mn, Cr, and Ti in single crystalline copper was investigated in the temperature range between 582 and 800 K, 639 and 829 It and 621 and 747 K, respectively. Ion beam sputtering in combination with secondary ion mass spectrometry (SIMS) was ...
We chemically immobilized live, motile Escherichia coli on micrometer-scale, photocatalytically patterned silicon surfaces via amine- and carboxylic acid-based chemistries. Immobilization facilitated (i) controlled positioning; (ii) high resolution cell wa ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
A large number of characterization tools for semiconductor based heterostructures are available nowadays. Most of these techniques deliver high temporal resolution (down to hundreds of femtoseconds) or good spatial resolution (down to sub nanometer resolut ...
In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion takes pla ...
Identical GaAs/Al0.2Ga0.8As multiple-quantum-well (MQW) structures uniformly doped with Si at various concentrations ranging from 1x10(17) to 1X10(19) cm(-3) are grown by molecular-beam epitaxy to study the effects of the background Si-doping level on the ...
After Zn diffusion into Si-doped GaAs (n almost-equal-to 1.5 X 10(18) cm-3), the Zn-diffused samples are annealed under different conditions: (i) in vacuum, (ii) in arsenic vapor, and (iii) with a Si3N4 mask capping the sample surface. The Zn concentration ...
Organic-inorganic hybrid coatings are becoming increasingly important due to their unique property combination [1, 2], including high optical transparency, improved scratch and abrasion resistance and excellent weathering, thanks to the synergism between t ...