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Low Threshold 1.55 µm Wavelength InAsP/InGaAsP Strained Multi-Quantum Well Laser Diode Grown by Chemical Beam Epitaxy

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Low Threshold 1.55 µm Wavelength InAsP/InGaAsP Strained Multi-Quantum Well Laser Diode Grown by Chemical Beam Epitaxy

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Direct measurement of the spectral dependence of Lamb coupling constant in a dual frequency quantum well-based VECSEL

1.55-mu m wavelength wafer-fused OP-VECSELs in flip-chip configuration

InAs/InP quantum dot VECSEL emitting at 1.5 mu m

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THz streak camera method for synchronous arrival time measurement of two-color hard X-ray FEL pulses

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