Degree of dissociation measured by FTIR absorption spectroscopy applied to VHF silane plasmas
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An adaptation of Kubelka's general model of diffuse reflectance and diffuse transmittance of light to nonideal scattering samples is proposed. It is applied to quant. Fourier transform IR spectrometry of nondiluted surface-derivatized silica powders. Corre ...
The equil. I2(g) + 2NO(g) = 2INO(g) was studied at room temp. by UV absorption spectroscopy. The equil. const. was measured as kp = (2.7 +- 0.3) * 10-6 atm-1 at 298 K. The 3rd-law calcns. lead to DHf(INO) of 120.0 +- 0.3 kJ/mol. The relative absorption spe ...
The temp. jump relaxation method was used for kinetic measurements in the gas phase. The system N2O4 .dblarw. 2NO2 was studied. Fast temp. jumps were induced by IR absorption from a CO2 laser. Temp. jumps of
a-Si:H films were prepared using pure silane in the temperature range from 200 degrees C up to 400 degrees C by the very high frequency glow discharge (VHF-GD) technique. During deposition a He/Ne laser beam directed across the discharge monitored powder f ...
The abs. :CF2 concn. is measured in situ and in real time by UV-absorption spectroscopy in the IR multiphoton dissocn. of CF2HCl during and after the laser pulse. The :CF2 prodn. rate is measured as a function of the laser intensity and the temp. at 9.17 m ...
Hydrogenated amorphous silicon has been prepared at a plasma excitation frequency in the very-high-frequency band at 70 MHz with the glow discharge technique at substrate temperatures between 280 and 50-degrees-C. The structural properties have been studie ...
Particulate contamination produced during plasma-assisted deposition of amorphous silicon devices can be responsible for reduced quality and yield. The threshold for powder formation imposes an upper limit on the radio frequency (rf) power and hence the de ...