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Consistency between Experimental Data for Ambipolar Diffusion Length and for Photoconductivity when Incorporated into the Standard Defect Model for a-Si:H

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A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...

2023

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While the influence of a glare source's spectrum on sensitivity to discomfort glare has been demonstrated repeatedly under electric light conditions, it has not yet been studied under actual daylit conditions. To investigate the influence of spectral alter ...

2023

Avoiding discomfort glare is one of the critical aspects of maintaining visual comfort, which significantly influences occupants' overall satisfaction with their indoor environment. Discomfort glare prediction models have been developed for various lightin ...

EPFL2022

With the growing awareness about ipRGC-influenced light (IIL) responses, design applications related to these responses are flourishing. To compare design options and optimize lighting conditions for building occupants, lighting simulations are typically u ...

TAYLOR & FRANCIS LTD2022

Light enables to see the world around us, while playing a key role in our biological functioning. During the last decades, light has become an important research topic for chronobiologists and neuroscientists, and their findings are increasingly interwoven ...

EPFL2021

Two-dimensional (2D) materials have attracted increasing attention over the last decade owing to their remarkable mechanical, electrical and optical properties. Following the groundbreaking discovery of graphene, a plethora of other atomically-thin materia ...

EPFL2020

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This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations ...

ELSEVIER2019

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Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella, Chiara Rossi

Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Donor Effect on the Photoinduced Interfacial Charge Transfer Dynamics of D−π–A Diketopyrrolopyrrole Dye Sensitizers Adsorbed on Titanium Dioxide

Jacques-Edouard Moser, Ulf Anders Hagfeldt, Heewon Bahng

In this report, we investigate the effects of a strong electron-donating group on the electron injection and recombination processes of diketopyrrolopyrrole (DPP)-sensitized TiO2 films by comparing the dynamics of triphenylamine donor-installed DPP_A and d ...

2018